A 10 W GaN/Si Doherty Power Amplifier Designed for 15 GHz 6G Band with 8 dB Backoff Efficiency
Paper i proceeding, 2025
This paper presents the design and implementation of a 10W GaN-on-Si Doherty Power Amplifier (DPA) for operation in the 15 GHz 6G band. The DPA was fabricated using Infineon's RF GaN-on-Si MMIC process. An experimental (simulation) result shows a peak PAE of 30-37%, and 22-27% PAE at 8 dB backoff, 10dB gain, and 2 GHz bandwidth. Thermally limited CW measurements confirmed high back-off efficiency with 24% PAE at 29 dBm output power at 14 GHz.
Backoff Efficiency
Gallium Nitride on Silicon
Ku Band
6G
Doherty Power Amplifier
Författare
Hossein Zaheri
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Rob Theodoor Wilhelm Anton Vissers
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Han Zhou
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gregor Lasser
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2025 - Proceedings
9798331519605 (ISBN)
2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2025
Turin, Italy,
Turin, Italy,
Affordable smart GaN IC solutions as enabler of greener applications (ALL2GaN)
Europeiska kommissionen (EU) (EC/HE/101111890), 2023-05-01 -- 2026-04-30.
VINNOVA (2023-00451), 2023-05-01 -- 2026-04-30.
Ämneskategorier (SSIF 2025)
Annan elektroteknik och elektronik
Telekommunikation
DOI
10.1109/INMMIC64198.2025.10975657