Fabrication and development of InP HEMTs on silicon substrate based on a new integration technique
Paper in proceeding, 2026
Hall Bar
Silicon Substrate
Metal Organic Chemical Vapor Deposition
InP High Electron Mobility Transistors
Integration Of Techniques
High Electron Mobility Transistors
Electron Beam Lithography
Sheet Resistance
III-V semiconductor materials
Fabrication Process
Contact Resistance
Author
Francesco Fortunato
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Nelson Rebelo
Low Noise Factory AB
Claire Besancon
III-V Lab
Florence Martin
III-V Lab
Bruno Ghyselen
Soitec SA
Jean Decobert
III-V Lab
Johan Bergsten
Low Noise Factory AB
Helena Rodilla
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
21622027 (ISSN) 21622035 (eISSN)
979-8-3503-7883-2 (ISBN)
Helsinki, Finland,
Chips JU 2023 RIA Move2THz
VINNOVA (2024-00556), 2024-06-01 -- 2027-05-30.
Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications (Move2THz)
European Commission (EC) (EC/HE/101139842), 2024-05-01 -- 2027-04-30.
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Infrastructure
Kollberg Laboratory
Myfab (incl. Nanofabrication Laboratory)
Subject Categories (SSIF 2025)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Nanotechnology for Electronic Applications
DOI
10.1109/IRMMW-THz61557.2025.11320086