DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Paper in proceedings, 2009

Author

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mikael Malmkvist

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Eric Lefebvre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Yannick Roelens

A. Noudeviwa

A. Olivier

Sylvain Bollaert

F. Danneville

Ludovic Desplanque

Xavier Wallart

Gilles Dambrine

2009 IEEE International Conference on Indium Phosphide & Related Materials

323-5

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-4244-3432-9

More information

Created

10/6/2017