Design and characterization of a highly linear 3 GHz GaN HEMT amplifier
Paper in proceeding, 2011
In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a maximum power consumption of 2.1 W. With a reduction of power consumption to 1 W the noise figure was improved by 0.6 dB while the OIP3 was degraded 3 dB.
Power consumption
high dynamic range
OIP3
GaN HEMT transistor
Linearity
Gain
Author
Pirooz Chehrenegar
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Olle Axelsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jonathan Felbinger
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011
5773310
978-145770649-3 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/INMMIC.2011.5773310
ISBN
978-145770649-3