Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
Paper in proceeding, 2011
InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.
Author
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
John Halonen
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Bengt Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Lunjie Zeng
Chalmers, Applied Physics, Microscopy and Microanalysis
Ramvall P.
Niklas Wadefalk
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Eva Olsson
Chalmers, Applied Physics, Microscopy and Microanalysis
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011
1092-8669 (ISSN)
978-145771753-6 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Physical Sciences
ISBN
978-145771753-6