Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
Paper in proceedings, 2011

InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.

Author

Joel Schleeh

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

John Halonen

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Bengt Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Lunjie Zeng

Chalmers, Applied Physics, Microscopy and Microanalysis

Ramvall P.

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Eva Olsson

Chalmers, Applied Physics, Microscopy and Microanalysis

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011

1092-8669 (ISSN)

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Physical Sciences

ISBN

978-145771753-6

More information

Created

10/6/2017