Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Journal article, 2012

We have used models based on the effective-mass approximation and Schrodinger-Poisson to design AlN/GaN multiple quantum well structures for intersubband transitions between two or three energy levels. The structures were realized by molecular beam epitaxy and the surface morphology and structural quality were investigated. We also investigated GaN waveguides that were fabricated using standard cleanroom techniques. Our work is focused on the various challenges associated to the fabrication of quantum cascade lasers based on group III-nitrides. These challenges are discussed in the light of our results.