On the large-signal modeling of High Power AlGaN/GaN HEMTs
Paper in proceeding, 2012
In this paper are given some recent results on modeling of High Power GaN HEMT devices. The GaN HEMT is very promising for high power application, but we push device to the limits, so many issues are becoming critical. For example, access resistances Rs, Rd in high power GAN HEMT are bias and temperature dependent-their extraction from cold FET measurements can lead to over optimistic prediction for output power. Thermal management, self-heating modeling are another very important issue-they influence reliability, power and PAE. Models without dynamic self-heating are not practical for GaN. The models without breakdown can easily predict world records for PAE, output power/mm etc. Some examples are given using vectorial Large Signal Measurements (LSNA/NVNA) to provide useful, global info about device behavior, influence of traps, knee voltage walkout etc.
Linearization
Linear
Nonlinear Modeling
Power Amplifiers
FET
GaN
Author
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Eigo Kuwata
Mitsubishi Electric Corporation
H. Ohtsuka
Mitsubishi Electric Corporation
Koji Yamanaka
Mitsubishi Electric Corporation
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
6258335978-146731087-1 (ISBN)
Areas of Advance
Information and Communication Technology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2012.6258335
ISBN
978-146731087-1