Wafer bondig for integrated III-V frequency multipliers on silicon
Paper in proceedings, 2013

In this paper low temperature (LT) plasma assisted wafer bonding for integration of an InGaAs/InAlAs/AlAs epitaxial strucutre is utilised to fabricate a heterostrucutre barrier varactor (HBV). Due to its nonlinear properties the HBV generates only odd harmonics of the input signal, thus the device can be used as a frequency multiplier. The silicon serves as the substrate for the microstrip circuitry.

Author

Aleksandra Malko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Conference on Wafer Bonding for Microsystems 3D- and Wafer Level Integration

75 - 76

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Other Engineering and Technologies

Other Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

More information

Created

10/8/2017