Heterogeneous Integration of Terahertz Diode Circuits
Paper in proceedings, 2015

We present an overview of the research made on integrated diode circuits for terahertz applications. This includes progress on heterogeneous integration of heterostructure barrier varactor multipliers and Schottky diode mixers on silicon substrate. The described technology uses silicon-on-insulator (SOI) substrates, for which accurate and well defined substrate thickness for the microstrip circuitry is obtained.

integrated circuits

Schottky diodes

submillimeter wave

wafer bonding.

heterostructure barrier varactors (HBVs)

Epitaxial transfer

Author

Aleksandra Malko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Vladimir Drakinskiy

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Peter Sobis

Omnisys Instruments

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

2015 Asia-Pacific Microwave Conference

Vol. 1

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/APMC.2015.7411749

ISBN

978-1-4799-8765-8

More information

Latest update

9/6/2018 1