Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes
Journal article, 2007

This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes to improve the diode efficiency especially for high-power frequency multiplier applications. The influence of barrier thickness on the destructive current leaking over and through the barrier is investigated for different biases and operating temperatures. The authors found that for an InP-based HBV, there is an optimum barrier thickness range between 10 to 14 nm which causes the lowest possible leakage current.

varactors

leakage currents

aluminium compounds

III-V semiconductors

indium compounds

gallium arsenide

Author

Arezoo Emadi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 90 1 012108-3

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1063/1.2430632

More information

Created

10/7/2017