Fabrication and characterization of field-plated buried-gate SiC MESFETs
Journal article, 2006

Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.

wide band gap semiconductors

microwave field effect transistors

silicon compounds

Schottky gate field effect transistors

Author

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Hans Hjelmgren

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Joakim Nilsson

Ericsson Microwave Systems AB

Johan Ståhl

Ericsson Microwave Systems AB

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 27 7 573-575

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LED.2006.877285

More information

Created

10/7/2017