Graphene field-effect transistors with high extrinsic fT and fmax
Journal article, 2019

In this work, we report on the performance of graphene field-effect transistors (GFETs) in which the extrinsic transit frequency (fT) and maximum frequency of oscillation (fmax) showed improved scaling behavior with respect to the gate length (Lg). This improvement was achieved by the use of high-quality graphene in combination with successful optimization of the GFET technology, where extreme low source/drain contact resistances were obtained together with reduced parasitic pad capacitances. GFETs with gate lengths ranging from 0.5 μm to 2 μm have been characterized, and extrinsic fT and fmax frequencies of up to 34 GHz and 37 GHz, respectively, were obtained for GFETs with the shortest gate lengths. Simulations based on a small-signal equivalent circuit model are in good agreement with the measured data. Extrapolation predicts extrinsic fT and fmax values of approximately 100 GHz at Lg=50 nm. Further optimization of the GFET technology enables fmax values above 100 GHz, which is suitable for many millimeter wave applications.

field-effect transistor

transit frequency

maximum frequency of oscillation

graphene

scaling

Author

Marlene Bonmann

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Muhammad Asad

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Xinxin Yang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrey Generalov

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Luca Banszerus

RWTH Aachen University

Christoph Stampfer

RWTH Aachen University

Martin Otto

Advanced Microelectronic Center Aachen (AMICA)

Daniel Neumaier

Advanced Microelectronic Center Aachen (AMICA)

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Electron Device Letters

0741-3106 (ISSN) 15580563 (eISSN)

Vol. 40 1 131-134 8552417

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Physical Sciences

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

DOI

10.1109/LED.2018.2884054

More information

Latest update

2/16/2023