Design and Fabrication of 4H-SiC RF MOSFETs
Journal article, 2007

We present simulations, fabrication and analysis of 4H-SiC RF power MOSFETs. We obtain an extrinsic transition frequency of 11.2 GHz and an f max = 11.9 GHz, a breakdown voltage above 200 V and an output power of 1.9 W/mm at 3 GHz. The measured devices are double fingered, source-gate-draingate-source with 2 × 0.4 mm total gate width and the nominal channel length of the devices is 0.5 μm. To the authors knowledge, this is the highest transition frequency and output power density ever reported for SiC RF MOSFETs. The antipunchthrough is introduced as a way to take advantage of the SiC's material properties. A detailed description of the device processing is also given. © 2007 IEEE.

Author

Gudjon Gudjonsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Fredrik Allerstam

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Hans Hjelmgren

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thomas Rödle

NXP Semiconductors

Hendrikus Jos

NXP Semiconductors

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 54 12 3138-3145

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/TED.2007.908547

More information

Created

10/7/2017