Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
Paper in proceeding, 2008

The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K. The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the highfrequency noise performance of the AlGaN/GaN-HEMT.The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier.

Noise

gallium-nitride

thermal

Author

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Other publications Research

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Other publications Research

Martin Fagerlind

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

International Microwave Symposium Digest, 2008, Atlanta

0149-645X (ISSN)

463-466
978-1-4244-1781-0 (ISBN)

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-4244-1781-0

More information

Created

10/8/2017

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