Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs
Journal article, 2008

The influence of field plates and surface traps on silicon carbide MESFETs for microwave operation was investigated. By increasing the length of gate-connected field plates from 50 to 800 nm, it was possible to increase the gate–drain breakdown voltage of the devices from 125 to 170 V. At the same time, the current slump effect of traps in the passivation oxide was reduced. By using a combination of field plates and a passivation oxide with low interface trap density, it was possible to reach an output power density of 8 W/mm at 3 GHz.

Author

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Fredrik Allerstam

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Hans Hjelmgren

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 55 8 1875-1879

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

More information

Created

10/7/2017