A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer
Journal article, 2008

A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated circuit technology has been designed, processed, and characterized. The design is based on a 4 times 100 mum AlGaN/GaN HEMT in a single-ended circuit topology. The mixer has an IF bandwidth of 2 GHz with a conversion loss (CL) of < 8 dB across the X-band with a minimum CL of 6.9 dB at 11 GHz. The large-signal performance is exemplified by IIP 3 levels of 22 and 30 dBm at local oscillator drive levels of 15 and 23 dBm, respectively. A minimum noise figure of 9 dB is achieved at 11.6 GHz.

III-V semiconductors MMIC mixers aluminium compounds gallium compounds high electron mobility transistors intermodulation distortion network topology semiconductor device noise wide band gap semiconductors

Author

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Martin Fagerlind

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 56 10 2201-2206

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

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Created

10/7/2017