High Power Heterostructure Barrier Varactor Quintupler Sources for G-Band Operation
Paper in proceeding, 2008
We have designed a frequency multiplier based on Heterostructure Barrier Varactors (HBVs) at 202 GHz. The InGaAs/InAlAs/InP HBV diodes were flip-chip mounted onto an aluminium-nitride (AlN) substrate with the microstrip pattern. The AlN-circuit was then mounted in an ultra compact 30x9 mm waveguide block. A quintupler (x5) operating at 202 GHz produced an output power of 23 mW.
terahertz sources
millimeter wave components
HBV
Author
Josip Vukusic
Chalmers, Applied Physics, Physical Electronics
Tomas Bryllert
Chalmers, Applied Physics, Physical Electronics
Jan Stake
Chalmers, Applied Physics, Physical Electronics
Proceedings of the 19th International Symposium on Space Terahertz Technology, [ISSTT 2008], April 28 to 30, 2008, Groningen, the Netherlands
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory