High Power Heterostructure Barrier Varactor Quintupler Sources for G-Band Operation

Paper i proceeding, 2008

We have designed a frequency multiplier based on Heterostructure Barrier Varactors (HBVs) at 202 GHz. The InGaAs/InAlAs/InP HBV diodes were flip-chip mounted onto an aluminium-nitride (AlN) substrate with the microstrip pattern. The AlN-circuit was then mounted in an ultra compact 30x9 mm waveguide block. A quintupler (x5) operating at 202 GHz produced an output power of 23 mW.