Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs
Paper in proceeding, 2008
The temperature dependence of the access resistances for AlGaN/GaN HEMTs is investigated. The self-heating is measured using infrared microscopy and the access resistances are extracted at different ambient temperatures. Their influence on the intrinsic small signal parameters is studied versus bias and ambient temperature.
Modelling
Thermal
Small signal
GaN
HEMT
Author
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Sudow
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008.
17-20
978-1-4244-2645-4 (ISBN)
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/INMMIC.2008.4745703
ISBN
978-1-4244-2645-4