Application of through silicon via technology for in situ temperature monitoring on thermal interfaces
Artikel i vetenskaplig tidskrift, 2010

In this paper, a series of micro-machining processes have been developed to fabricate a test platform with the ability of in situ temperature monitoring on thermal interface behaviour. Through silicon vias (TSVs) with an aspect ratio up to 13 using Cu as a conductor have been applied to connect an array of platinum-based temperature sensors directly deposited on the thermal interfaces to be measured. The sensors are subsequently calibrated by an industry standard resistance temperature detector. Results show that the temperature sensors function normally in a temperature range up to 250 degrees C. This demonstrates the successful deposition of temperature-sensing materials and their good connection to the TSVs. The realization of direct precise temperature measurement on the thermal interface of this test platform enables thermal characterization with a high accuracy.



Yifeng Fu

Chalmers, Teknisk fysik, Elektronikmaterial

Teng Wang

Chalmers, Teknisk fysik, Elektronikmaterial

Ove Jonsson

FOAB Elektronik AB

Johan Liu

Chalmers, Teknisk fysik, Elektronikmaterial

Journal of Micromechanics and Microengineering

0960-1317 (ISSN) 13616439 (eISSN)

Vol. 20 2 id 025027 (5 pp)- 025027


Nanovetenskap och nanoteknik




Annan elektroteknik och elektronik



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