Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD
Artikel i vetenskaplig tidskrift, 2013

Due to their unique thermal, electronic and mechanical properties, carbon nanotubes (CNTs) have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition (PECVD) has been extensively developed as one growth technique to produce vertically-aligned carbon nanotubes (VACNTs). Though CNTs show a trend to be integrated into nanoelectromechanical system (NEMS), CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and underlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and by increasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT density by changing the thickness of Cu underlayer. © 2013 Shanghai University and Springer-Verlag Berlin Heidelberg.

Substrate

Carbon nanotube (CNT)

Effect

Underlayer

Författare

Liang Xu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Di Jiang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Yifeng Fu

SHT Smart High-Tech

S. Xavier

Thales Research and Technology

S. Bansropun

Thales Research and Technology

A. Ziaei

Thales Research and Technology

S. Tu

East China University of Science and Technology

Johan Liu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Advances in Manufacturing

2095-3127 (ISSN) 2195-3597 (eISSN)

Vol. 1 236-240

Ämneskategorier

Nanoteknik

DOI

10.1007/s40436-013-0036-z