Chemical vapor deposition grown graphene on Cu-Pt alloys
Artikel i vetenskaplig tidskrift, 2017

In this letter, the results from a series of experiments where graphene was grown on copper-platinum (Cu-Pt) alloy foils by chemical vapor deposition (CVD) are presented. By using Raman spectroscopy to analyze graphene films grown on Pt-Cu alloy foils with different Cu/Pt weight ratios (75/25, 50/50 and 25/75), we could show how the Cu/Pt weight ratio affected both the quality and the number of layers in the as-synthesized graphene films. Furthermore, graphene growth was shown to occur at temperatures as low as 750 °C due to what we believe is the strong catalytic ability of the Cu-Pt alloy foils. By keeping the flow rate of the CH4 precursor gas as low as 1.5 sccm, a low growth rate was obtained where the growth rates of monolayer and bilayer graphene could be controlled by simply adjusting the growth time.




Chemical vapor deposition


Yong Zhang

Elektronikmaterial och system

Yifeng Fu

Elektronikmaterial och system

Michael Edwards

Elektronikmaterial och system

Kjell Jeppson

Elektronikmaterial och system

Lilei Ye

SHT Smart High-Tech

Johan Liu

Elektronikmaterial och system

Materials Letters

0167-577X (ISSN)

Vol. 193 255-258