Boosting Second-Harmonic Generation in Monolayer Rhenium Disulfide by Reversible Laser Patterning
Artikel i vetenskaplig tidskrift, 2022

Active modification and control of transition metal dichalcogenides (TMDs) properties are highly desirable for next-generation optoelectronic applications. In particular, controlling one of the most important characteristics of TMDs─their crystal structure and symmetry─may open means for manipulating their optical nonlinearities and electrical transport properties. Here, we show that a monolayer ReS2, which does not have a broken inversion symmetry due to its stable 1T′-distorted phase and correspondingly shows only weak second-harmonic generation (SHG), can produce a significantly enhanced (∼2 orders of magnitude) SHG upon reversible laser patterning. This enhancement can be explained by the laser-induced transition from centrosymmetric 1T′ to noncentrosymmetric 2H-phase. This hypothesis is confirmed by polarization-resolved SHG measurements, which reveal a gradual change from the 2-fold to 6-fold symmetry profiles upon laser patterning. Additionally, we found that laser patterning of the bilayer ReS2 samples, contrary to the monolayers, leads to a substantially reduced SHG signal. This result corroborates the 1T′-to-2H laser-induced phase transition. Finally, we show that the laser-induced patterning is reversible by heat. These results open a possibility to actively and reversibly control the crystal structure of mono- and few-layer ReS2 and thus its optical and electronic properties.

ReS 2

laser-induced patterning

second-harmonic generation

phase transition

Författare

Betül Kücüköz

Chalmers, Fysik, Nano- och biofysik

Battulga Munkhbat

Chalmers, Fysik, Nano- och biofysik

Timur Shegai

Chalmers, Fysik, Nano- och biofysik

2D-Tech

ACS Photonics

2330-4022 (eISSN)

Vol. 9 2 518-526

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Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Den kondenserade materiens fysik

Infrastruktur

Chalmers materialanalyslaboratorium

DOI

10.1021/acsphotonics.1c01358

Mer information

Senast uppdaterat

2024-02-29