Design of a Compact GaN Power Amplifier with High Efficiency and Beyond Decade Bandwidth
Artikel i vetenskaplig tidskrift, 2022

This letter presents a power amplifier (PA) design and network synthesis approach to achieve wideband and efficient performance with a very compact circuit size. A design method is presented in detail to convert a canonical filter-based high-order matching network to the proposed matching configuration with transistor parasitic and packaged elements absorption, and a compact passive network footprint. As a proof of concept, a prototype GaN HEMT PA is implemented. Starting from a fourth-order output network filter, the inductances and capacitance of the filter elements are re-organized to model, and thus absorb the output parasitics of the transistor, leading to a compact footprint with only four transmission lines. The measured results show that the prototype PA achieves an output power of 41.9-44.3 dBm and a 55-74 % drain efficiency, over a record-high decade bandwidth (0.35-3.55 GHz).

wideband matching networks

HEMT

power amplifier (PA)

decade bandwidt

Energy efficiency

GaN

Författare

Han Zhou

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Jose-Ramon Perez-Cisneros

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Björn Langborn

Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk

Thomas Eriksson

Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN) 15581764 (eISSN)

Vol. 32 12 1439-1442

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Telekommunikation

Kommunikationssystem

Annan elektroteknik och elektronik

DOI

10.1109/LMWC.2022.3186805

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Senast uppdaterat

2024-05-01