On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs

Paper i proceeding, 2022

4 - 8 GHz low-noise amplifiers (LNAs) based on InP high electron mobility transistors (InP HEMTs) with different spacer thickness in the InAlAs-InGaAs heterostructure were fabricated and characterized at 5 K. A variation in the lowest average noise temperature of the LNA was observed with spacer thickness. We here report that the subthreshold swing (SS) at 5 K for the HEMT exhibited similar dependence with spacer thickness as the lowest average noise temperature of the LNA. This suggests that low-temperature characterization of SS for the HEMT can be used as a rapid assessment of anticipated noise performance in the cryogenic HEMT LNA.