Design, Fabrication and characterisation of High Power HBV Diodes
Paper i proceeding, 2005
We present design and analysis of material structures and device geometries for heterostructure barrier varactor diodes (HBVs) for high-power frequency multipliers. The methods aim at finding optimum epitaxial layer structures with respect to diode power handling capability and efficiency. A distributed device geometry for further increasing the output power levels whilst maintaining acceptable device temperatures is also presented. Finally, an electro-thermal HBV model with the ability of incorporating temperature-dependent device parameters is used to simulate the introduced devices, followed by a design example of a 3×4-barrier high-power HBV diode.
HBV
Författare
Arezoo Emadi
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Josip Vukusic
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Mattias Ingvarson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Mahdad Sadeghi
Maskinkonstruktion och design, MC2 process laboratorium
Tomas Bryllert
Arne Olsen
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Jan Stake
Maskinkonstruktion och design, MC2 process laboratorium
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.)
Session: P05-04
Ämneskategorier
Annan elektroteknik och elektronik