Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers

Artikel i vetenskaplig tidskrift, 2010

Strong enhancement of optical quality in quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates is demonstrated. This has resulted in 3.7 or 5.4 times enhancement of photoluminescence intensity from the metamorphic quantum wells when using dilute nitride superlattice alone or adding nitrogen in a strain compensated GaAs/In0.3Al0.7As superlattice, respectively. This study shows great potentials by incorporating N in metamorphic buffers to further improve the quality of metamorphic optoelectronic devices.