Flip-Chip-Based Multichip Module for Low Phase-Noise V -Band Frequency Generation
Artikel i övriga tidskrifter, 2010

This paper reports on a flip-chip (FC)-based multichip module (MCM) for low phase-noise (PN) V -band frequency generation. A high-performance x8 GaAs metamorphic high-electron mobility transistor monolithic microwave integrated circuit (MMIC) multiplier and a low PN 7-GHz GaAs InGaP heterojunction bipolar transistor (HBT) MMIC oscillator were used in the module. The microstrip MMICs were FC bonded to an Al2O3 carrier with patterns optimized for low-loss transitions. The FC-based module was experimentally characterized to have a PN of -88 dBe/Hz @ 100-kHz offset and -112 dBc/Hz @ 1-MHz offset with an output power of 11 dBm. For comparison, the MMICs were also FC bonded as individual chips and the performance was compared with the bare dies without FC bonding. It was verified that the FC bonding has no detrimental effect on the MMIC performance. The tests revealed that the FC module provided improved performance. To our best knowledge, this is the first FC-based module for millimeter-wave frequency generation. The module also presents one of the best PN reported for millimeter-wave frequency sources.

interconnection

ghz

oscillator

V -band

monolithic microwave integrated circuit (MMIC)

oscillator

multiplier

Flip-chip (FC)

receiver

technology

frequency generation

vco

millimeter wave

phemt

phase noise (PN)

performance

multichip module (MCM)

design

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IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 58 9 2408-2419

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TMTT.2010.2057135

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2019-07-22