Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents
Artikel i vetenskaplig tidskrift, 2011
Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepared by reactive sputtering on silicon. Broken planes of the silicon crystal, which may contribute to the occurrence of interface states, were identified between the silicon and SiOx interlayer by transmission electron microscopy (TEM). A second domain was found between SiOx and HfO2 constituting a gradual transition region between the two oxides. This interface region was found to be a source of unstable charge traps where captured electrons interact with the silicon energy states through a combined tunneling and thermal process.
hfo2
ultrathin hafnium oxide
oxide-semiconductor capacitors
internal interfaces
defects
metal
gate stacks
border traps
generation statistics
dielectric interfaces
Författare
Bahman Raeissi
Universitetet i Oslo
Chalmers, Mikroteknologi och nanovetenskap
Johan Piscator
Chalmers, Mikroteknologi och nanovetenskap
Y. Y. Chen
Chalmers, Mikroteknologi och nanovetenskap
Olof Engström
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Journal of the Electrochemical Society
0013-4651 (ISSN) 1945-7111 (eISSN)
Vol. 158 3 G63-G70Ämneskategorier
Elektroteknik och elektronik
DOI
10.1149/1.3530845