On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
Paper i proceeding, 2022

4 - 8 GHz low-noise amplifiers (LNAs) based on InP high electron mobility transistors (InP HEMTs) with different spacer thickness in the InAlAs-InGaAs heterostructure were fabricated and characterized at 5 K. A variation in the lowest average noise temperature of the LNA was observed with spacer thickness. We here report that the subthreshold swing (SS) at 5 K for the HEMT exhibited similar dependence with spacer thickness as the lowest average noise temperature of the LNA. This suggests that low-temperature characterization of SS for the HEMT can be used as a rapid assessment of anticipated noise performance in the cryogenic HEMT LNA.

InP HEMT

subthreshold swing

low-noise amplifier

noise

Cryogenic

Författare

Junjie Li

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Arsalan Pourkabirian

Low Noise Factory AB

Johan Bergsten

Low Noise Factory AB

Niklas Wadefalk

Low Noise Factory AB

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Asia-Pacific Microwave Conference Proceedings, APMC

Vol. 2022-November 10-12
978-4-902339-56-7 (ISBN)

Asia-Pacific Microwave Conference (APMC)
Yokohama, Japan,

Infrastruktur

Kollberglaboratoriet

Nanotekniklaboratoriet

Ämneskategorier

Elektroteknik och elektronik

Nanoteknik

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Senast uppdaterat

2024-07-17