Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
Paper i proceeding, 2011
In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like C gs , C gd , f t and f c . Problems arise when trying to reproduce the values of g d and C ds due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic g m and also f max . © 2011 IEEE.
Monte Carlo simulations
device modeling
InAs/AlSb HEMTs
Författare
Helena Rodilla
Universidad de Salamanca
T. Gonzalez
Universidad de Salamanca
J. Mateos
Universidad de Salamanca
Giuseppe Moschetti
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Jan Grahn
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February through 11 February
5744234
978-142447863-7 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/SCED.2011.5744234
ISBN
978-142447863-7