Björn Hult

Doctoral Student at Microwave Electronics

Source: chalmers.se
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Showing 5 publications

2023

Investigation of Isolation Approaches and the Stoichiometry of SiN<inf>x</inf> Passivation Layers in “Buffer-Free” AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

Björn Hult, Mattias Thorsell, J. T. Chen et al
Physica Status Solidi (A) Applications and Materials Science. Vol. 220 (8)
Journal article
2022

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a ‘Buffer-Free’ Heterostructure

Björn Hult, Mattias Thorsell, J. T. Chen et al
IEEE Electron Device Letters. Vol. 43 (5), p. 781-784
Journal article
2022

AlGaN/GaN/AlN 'Buffer-Free' High Voltage MISHEMTs with Si-rich and Stoichiometric SiN<inf>x</inf>First Passivation

Björn Hult, Mattias Thorsell, J. T. Chen et al
2022 Compound Semiconductor Week, CSW 2022
Paper in proceeding
2022

Mg-doping and free-hole properties of hot-wall MOCVD GaN

A. Papamichail, Anelia Kakanakova-Georgieva, E. O. Sveinbjornsson et al
Journal of Applied Physics. Vol. 131 (18)
Journal article

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