A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz
Journal article, 2019

Author

Tongde Huang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Sining An

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Johan Bergsten

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Japanese Journal of Applied Physics

0021-4922 (ISSN)

Vol. 58 SC SCCD19

Subject Categories

Atom and Molecular Physics and Optics

Other Physics Topics

Condensed Matter Physics

DOI

10.7567/1347-4065/ab09d9

More information

Latest update

12/18/2019