Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
Paper in proceedings, 2019

This work addresses the angular dependence of DC properties in 100nm InP HEMT devices under the influence of applied static magnetic field at 2 K. When kept at an angle 90o towards a magnetic field of 14 T, the maximum output drain current Ids was reduced more than 99 %. A rotation sweep of the transistor revealed a strong angular and B-field dependence on Ids. This was correlated with a reduction in dc transconductance and increase in on-resistance of the transistor. The RF properties of the transistor were tested by measuring an 0.3-14 GHz InP HEMT MMIC low-noise amplifier (LNA) at 2 K kept at an angle 90o towards a magnetic field up to 10 T. The gain and noise temperature were strongly decreased and increased, respectively, already below 1 T. The results show that precise alignment of the cryogenic InP HEMT LNA is crucial in a magnetic field. Even a slight mis-orientation of a few degrees leads to a strong degradation of the gain and noise temperature.

cryogenic

InP HEMT

low noise amplifier

angular dependence

magnetic field

Author

Isabel Harrysson Rodrigues

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

David Niepce

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Technology

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Arsalan Pourkabirian

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Joel Schleeh

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IIS UTokyo SYMPOSIUM No.100

Compound Semiconductor Week
Nara, Japan,

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Nanoscience and Nanotechnology (2010-2017)

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Condensed Matter Physics

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Nanofabrication Laboratory

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11/13/2019