A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs
Paper in proceeding, 2023
signal and noise model at the cryogenic temperature of ~10 K
of Gallium Nitride (GaN) - based High Electron Mobility
Transistors (HEMTs). The results confirm a clear potential of
the GaN technology for the cryogenic low noise applications as
the model predicts a minimum noise temperature of ~ 4 K at
the physical temperature of ~ 10 K. The improvement of the
noise cryogenic performances is attributed to the decrease of
the access resistances and the enhancement of the electron
transport mechanisms. Moreover, the scalability of the model
over the measured different gate peripheries is explored and
provides new insights on the possibilities of further
optimization of this technology for the cryogenic and low noise
operation. Potentially, GaN HEMTs would provide enhanced
dynamic range with the noise performance similar to InP
devices.
LNA
GaN HEMT
cryogenic
AlGaN
Author
Mohamed Aniss Mebarki
Chalmers, Space, Earth and Environment, Onsala Space Observatory
Ragnar Ferrand-Drake Del Castillo
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Erik Sundin
Chalmers, Space, Earth and Environment, Onsala Space Observatory
Denis Meledin
Chalmers, Space, Earth and Environment, Onsala Space Observatory
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Victor Belitsky
Chalmers, Space, Earth and Environment, Onsala Space Observatory
Vincent Desmaris
Chalmers, Space, Earth and Environment, Onsala Space Observatory
Proceedings of the 32nd IEEE International Symposium on Space THz Technology
Baeza, ,
Infrastructure
Onsala Space Observatory
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering