Ragnar Ferrand-Drake Del Castillo

Doctoral Student at Microwave Electronics

Source: chalmers.se

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Publications (9)
Projects (0)

Showing 9 publications

2024

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Björn Hult, Johan Bergsten, Ragnar Ferrand-Drake Del Castillo et al

IEEE Transactions on Electron Devices. Vol. In Press

Journal article

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2024

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Ragnar Ferrand-Drake Del Castillo, Ding Yuan Chen, J. T. Chen et al

IEEE Transactions on Electron Devices. Vol. 71 (6), p. 3596-3602

Journal article

2023

GaN High-Electron-Mobility Transistors with Superconducting Nb Gates for Low-Noise Cryogenic Applications

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Alexey Pavolotskiy et al

Physica Status Solidi (A) Applications and Materials Science. Vol. 220 (8)

Journal article

2023

Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Denis Meledin et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 71 (5), p. 1923-1931

Journal article

2023

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

A. Papamichail, A. R. Persson, Steffen Richter et al

Applied Physics Letters. Vol. 122 (15)

Journal article

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2023

Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Erik Sundin et al

2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023, p. 29-32

Paper in proceeding

2022

A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Erik Sundin et al

32nd International Symposium of Space Terahertz Technology, ISSTT 2022

Paper in proceeding

2022

GaN HEMT with superconducting Nb gates for low noise cryogenic applications

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Alexey Pavolotskiy et al

2022 Compound Semiconductor Week, CSW 2022

Paper in proceeding

2022

Considerations in the development of a gate process module for ultra-scaled GaN HEMTs

Ragnar Ferrand-Drake Del Castillo, Niklas Rorsman

2022 Compound Semiconductor Week, CSW 2022

Paper in proceeding

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