Ragnar Ferrand-Drake Del Castillo
PhD candidate in microwave electronics. Specialized in design, cleanroom processing, and characterization of GaN High Electron Mobility Transistors (HEMTs) for high-frequency applications, such as RADAR and 5G.
Showing 9 publications
Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures
Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures
GaN HEMT with superconducting Nb gates for low noise cryogenic applications
A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs
Considerations in the development of a gate process module for ultra-scaled GaN HEMTs
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