Mohamed Aniss Mebarki
Mohamed received a M.Sc in microelectronics and in radio-frequency engineering respectively from the University of Constantine (Algeria) and the University of Lille (France) .
His research work will be focused on low-noise amplifiers used for radio-astronomy applications.
Showing 9 publications
A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs
Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures
Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures
A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs
Wideband Slotline-to-Microstrip Transition for 210-375 GHz based on Marchand Baluns
A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs
GaN HEMT with superconducting Nb gates for low noise cryogenic applications
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