Mohamed Aniss Mebarki
Showing 8 publications
Design, Characterization and Modeling of GaN-based HEMTs for Low-Noise and Cryogenic Applications
Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures
Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures
A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs
Wideband Slotline-to-Microstrip Transition for 210-375 GHz based on Marchand Baluns
GaN HEMT with superconducting Nb gates for low noise cryogenic applications
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