Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors
Journal article, 2025
Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS2) nanoribbons as small as sub-10 nm in width. The WS2 nanoribbon junctions having different widths display diodic current-voltage characteristics, providing a way to create and tune nanoscale device properties by controlling the size of the structures. The transport properties of the nanoribbon FETs are primarily governed by narrow channel effects, where the mobility in the narrow channels is limited by edge scattering. Our findings on nanoribbon devices hold potential for developing future-generation nanometer-scale van der Waals semiconductor-based devices and circuits.
WS2
zigzagedges
nanoribbon
diodes
2D semiconductors
TMDs
transition metal dichalcogenides
field-effect transistors
crystallographically controlled nanostructuring
Author
Anamul Md Hoque
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Aleksandr Poliakov
Chalmers, Physics, Nano and Biophysics
Battulga Munkhbat
Chalmers, Physics, Nano and Biophysics
Konstantina Kyprianou
Chalmers, Chemistry and Chemical Engineering, Energy and Material
Abhay Vivek Agrawal
Chalmers, Physics, Nano and Biophysics
Nano and Biophysics DP
Andrew Yankovich
Chalmers, Physics, Nano and Biophysics
Sameer Kumar Mallik
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Bing Zhang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Richa Mitra
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Alexei Kalaboukhov
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Eva Olsson
Chalmers, Physics, Nano and Biophysics
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Julia Wiktor
Chalmers, Physics, Condensed Matter and Materials Theory
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Timur Shegai
Chalmers, Physics, Nano and Biophysics
Saroj Prasad Dash
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 25 5 1750-17572D Heterostructure Non-volatile Spin Memory Technology (2DSPIN-TECH)
European Commission (EC) (EC/HE/101135853), 2023-12-01 -- 2026-11-30.
Spintronics with Topological Quantum Material and Magnetic Heterostructures
Swedish Research Council (VR) (2021-04821), 2022-01-01 -- 2025-12-31.
Stark plasmon-exciton koppling för effektiva foton-foton interaktioner
Swedish Research Council (VR) (2017-04545), 2018-01-01 -- 2021-12-31.
2D material-based technology for industrial applications (2D-TECH)
VINNOVA (2024-03852), 2023-11-01 -- 2029-12-31.
VINNOVA (2019-00068), 2020-05-01 -- 2024-12-31.
GKN Aerospace Sweden (2D-tech), 2021-01-01 -- 2024-12-31.
Visualizing the dynamics of strong light-matter interactions using NEX-GEN-STEM
Swedish Research Council (VR) (2020-04986), 2021-01-01 -- 2024-12-31.
Kvantplasmonik – en teknologi för foton-fotonväxelverkan på kvantnivå vid rumstemperatur
Swedish Research Council (VR) (2016-06059), 2017-01-01 -- 2022-12-31.
2Dimensional van der Waals Spin-Orbit Torque Technology
Swedish Research Council (VR) (2021-05925), 2021-12-01 -- 2024-11-30.
Topology and Magnetism in Novel Quantum Materials
Swedish Research Council (VR) (2018-07046), 2020-01-01 -- 2021-12-31.
Graphene Core Project 3 (Graphene Flagship)
European Commission (EC) (EC/H2020/881603), 2020-04-01 -- 2023-03-31.
Subject Categories (SSIF 2025)
Materials Chemistry
Condensed Matter Physics
Areas of Advance
Nanoscience and Nanotechnology
Energy
Materials Science
Infrastructure
Myfab (incl. Nanofabrication Laboratory)
DOI
10.1021/acs.nanolett.4c01076
PubMed
39846459