Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE

Shu Min Wang; Göran Adolfsson; Huan Zhao Ternehäll; Yuxin Song; Mahdad Sadeghi; Johan Gustavsson; Peter Modh; Åsa Haglund; Petter Westbergh; Anders Larsson

doi:10.1002/pssb.201000788

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
Journal article, 2011

In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.

carrier localization

molecular-beam epitaxy

quantum-well lasers

modulation

dilute nitrides

1.3 mu m edge emitting laser

performance

gainnas lasers

GaAs

GaInNAs

temperature

threshold current

photoluminescence

surface segregation