Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
Paper in proceedings, 2015

An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4” wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.

Author

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Arsalan Pourkabirian

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Joel Schleeh

Low Noise Factory AB

Niklas Wadefalk

Low Noise Factory AB

Piotr Starski

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Göran Alestig

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

John Halonen

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Bengt Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015

Vol. 1 Art. no. 7411746-

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Nano Technology

Other Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/APMC.2015.7411746

ISBN

978-1-4799-8765-8

More information

Latest update

11/23/2018