Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing
Review article, 2016

In similarity to graphene, two-dimensional (2D) hexagonal boron nitride (hBN) has some remarkable properties, such as mechanical robustness and high thermal conductivity. In addition, hBN has superb chemical stability and it is electrically insulating. 2D hBN has been considered a promising material for many applications in electronics, including 2D hBN based substrates, gate dielectrics for graphene transistors and interconnects, and electronic packaging insulators. This paper reviews the synthesis, transfer and fabrication of 2D hBN films, hBN based composites and hBN-based van der Waals heterostructures. In particular, this review focuses on applications in manufacturing electronic devices where the insulating and thermal properties of hBN can potentially be exploited. 2D hBN and related composite systems are emerging as new and industrially important materials, which could address many challenges in future complex electronics devices and systems.

electronics manufacturing

two-dimensional hexagonal boron nitride

van der waals heterostructures

Author

Jie Bao

Shanghai University

Huangshan University

Kjell Jeppson

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Michael Edwards

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Yifeng Fu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Lilei Ye

SHT Smart High-Tech

Xiuzhen Lu

Shanghai University

Johan Liu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Electronic Materials Letters

1738-8090 (ISSN) 20936788 (eISSN)

Vol. 12 1 1-16

Innovative Nano and Micro Technologies for Advanced Thermo and Mechanical Interfaces (NANOTHERM)

European Commission (EC) (EC/FP7/318117), 2012-09-01 -- 2015-08-31.

Areas of Advance

Nanoscience and Nanotechnology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

DOI

10.1007/s13391-015-5308-2

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7/2/2021 4