Monolithically Integrated 200-GHz Double-Slot Antenna and Resistive Mixers in a GaAs-mHEMT MMIC Process
Artikel i vetenskaplig tidskrift, 2011

This paper presents the design and characterization of two resistive mixers integrated with a double-slot antenna in a 100-nm GaAs mHEMT technology. With RF frequency varying from 185 to 202 GHz, a typical conversion loss(Lc)of 8.0 dB is measured for the single-ended mixer and a typical Lc of 12.2 dB is obtained from one of the two IF outputs for the single-balanced mixer. Each mixer is integrated with a double-slot antenna and mounted on an Si lens. Incorporating the antenna gain and the conversion loss of the mixer, a typical receiver gain of 15.4 dB is achieved for the integrated antenna with single-ended mixer, and a typical receiver gain of 11.2 dB is obtained for the integrated antenna with single-balanced mixer by measuring one of the two IF outputs. In this paper, a novel method is also proposed and proved to evaluate a moderate to high noise figure (NF) device in millimeter/submillimeter frequency band. The result shows that the single-ended mixer in this paper has an NF around 1.0 dB higher compared to its Lc, and the single-balanced one has an NF about 1.6 dB higher than its Lc at room-temperature operation.

double-slot antenna

monolithic microwave integrated circuit (MMIC)

metamorphic HEMT (mHEMT)

GaAs

G-band

N-times

resistive mixer

system gain

Conversion loss

noise figure (NF)

Författare

Yu Yan

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Yogesh Karandikar

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Sten Gunnarsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Bahar M. Motlagh

Chalmers University of Technology

Serguei Cherednichenko

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Ingmar Kallfass

Karlsruher Institut für Technologie (KIT)

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

Arnulf Leuther

Karlsruher Institut für Technologie (KIT)

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 59 2494-2503

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TMTT.2011.2161326