MBE growth of Bi2Te3 for Thermoelectrics
Paper i proceeding, 2013

Molecular beam epitaxy of Bi2Te3 on various substrates for thermoelectric applications is investigated. Growth conditions were optimized based on Si(111) substrates with two different growth techniques, co-deposition followed by crystallization and direct growth. Growth of Bi 2Te3 on GaAs, GaN, et. al. substrates with different crystal directions and offcut angles were investigated. High quality Bi2Te3 thin films were achieved with very low carrier density and record high carrier mobility.

Författare

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Sophie Charpentier

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Attila Fülöp

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Maria Ekström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

luca galletti

Consiglo Nazionale Delle Richerche

Universita degli Studi di Napoli Federico II

Thilo Bauch

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Floriana Lombardi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Asia Communications and Photonics Conference, ACP

2162108X (ISSN)

Ämneskategorier

Materialteknik

ISBN

978-155752989-3

Mer information

Senast uppdaterat

2018-12-11