The dependence of the high-frequency performance of graphene field-effect transistors on channel transport properties
Artikel i vetenskaplig tidskrift, 2020

This paper addresses the high-frequency performance limitations of graphene field-effect transistors (GFETs) caused by material imperfections. To understand these limitations, we performed a comprehensive study of the relationship between the quality of graphene and surrounding materials and the high-frequency performance of GFETs fabricated on a silicon chip. We measured the transit frequency (fT) and the maximum frequency of oscillation (fmax) for a set of GFETs across the chip, and as a measure of the material quality, we chose low-field carrier mobility. The low-field mobility varied across the chip from 600 cm2/Vs to 2000 cm2/Vs, while the fT and fmax frequencies varied from 20 GHz to 37 GHz. The relationship between these frequencies and the low-field mobility was observed experimentally and explained using a methodology based on a small-signal equivalent circuit model with parameters extracted from the drain resistance model and the charge-carrier velocity saturation model. Sensitivity analysis clarified the effects of equivalent-circuit parameters on the fT and fmax frequencies. To improve the GFET high-frequency performance, the transconductance was the most critical parameter, which could be improved by increasing the charge-carrier saturation velocity by selecting adjacent dielectric materials with optical phonon energies higher than that of SiO2.

microwave electronics

graphene

contact resistances

maximum frequency of oscillation

transconductance.

transit frequency

field-effect transistors

high frequency

Författare

Muhammad Asad

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Marlene Bonmann

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Xinxin Yang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Kjell Jeppson

RWTH Aachen University

Luca Banszerus

Advanced Microelectronic Center Aachen (AMICA)

M. Otto

RWTH Aachen University

Christoph Stampfer

Advanced Microelectronic Center Aachen (AMICA)

Daniel Neumaier

Advanced Microelectronic Center Aachen (AMICA)

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

IEEE Journal of the Electron Devices Society

2168-6734 (ISSN)

Vol. 8 457-464 9070193

Infrastruktur

Kollberglaboratoriet

Ämneskategorier

Teknisk mekanik

Elektroteknik och elektronik

DOI

10.1109/JEDS.2020.2988630

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Senast uppdaterat

2021-01-19