A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs

Paper i proceeding, 2023

We present a detailed study of a scalable small
signal and noise model at the cryogenic temperature of ~10 K
of Gallium Nitride (GaN) - based High Electron Mobility
Transistors (HEMTs). The results confirm a clear potential of
the GaN technology for the cryogenic low noise applications as
the model predicts a minimum noise temperature of ~ 4 K at
the physical temperature of ~ 10 K. The improvement of the
noise cryogenic performances is attributed to the decrease of
the access resistances and the enhancement of the electron
transport mechanisms. Moreover, the scalability of the model
over the measured different gate peripheries is explored and
provides new insights on the possibilities of further
optimization of this technology for the cryogenic and low noise
operation. Potentially, GaN HEMTs would provide enhanced
dynamic range with the noise performance similar to InP
devices.