Low-frequency Noise Characterization of Graphene FET THz Detectors
Paper i proceeding, 2018

Graphene field-effect transistors are promising for direct detection of THz signals at room temperature. The sensitivity of such detectors can be in part limited by the low-frequency noise. Here, we report on the characterization of the low-frequency noise of graphene field-effect transistor THz
detectors in the frequency range from 1 Hz to 1 MHz. The room-temperature Hooge parameter is extracted to be around 2×10-3. The voltage responsivity at room-temperature and the corresponding minimum noise equivalent power at 0.3 THz are estimated to be 11 V/W and 0.2 nW/Hz0.5, respectively, at a modulation frequency of 333 Hz, which shows comparable results with other detector technologies.

, terahertz, detector

Graphene field-effect transistors

Författare

Xinxin Yang

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Kjell Jeppson

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Luca Banszerus

RWTH Aachen University

Christoph Stampfer

RWTH Aachen University

Martin Otto

AMO

Daniel Neumaier

AMO

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

21622027 (ISSN) 21622035 (eISSN)

Vol. 2018-September 8510404
978-153863809-5 (ISBN)

43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Nagoya, Japan,

Graphene Core Project 1. Graphene-based disruptive technologies (Graphene Flagship)

Europeiska kommissionen (EU) (EC/H2020/696656), 2016-04-01 -- 2018-03-31.

Flexibla terahertz detektorer i grafen

Vetenskapsrådet (VR) (2017-04504), 2018-01-01 -- 2021-12-31.

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Infrastruktur

Kollberglaboratoriet

Nanotekniklaboratoriet

Ämneskategorier

Nanoteknik

DOI

10.1109/IRMMW-THz.2018.8510404

Mer information

Senast uppdaterat

2024-07-17