Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy
Paper i proceeding, 2008
Scanning near-field optical microscopy measurements of the lateral spontaneous emission profile for narrow ridge waveguide 1.3 um GaInNAs-GaAs lasers reveal significant lateral carrier diffusion, which can explain the high characteristic temperature of the threshold current.
SNOM
semiconductor lasers
InGaNAs
characteristic temperature
lateral carrier diffusion
Författare
Göran Adolfsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Mahdad Sadeghi
Chalmers, Mikroteknologi och nanovetenskap, Nanotekniklaboratoriet
Jörgen Bengtsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Anders Larsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Jun Lim
University of Nottingham
Ville Vilokkinen
Modulight, Inc.
P. Melanen
Modulight, Inc.
21st IEEE International Semiconductor Laser Conference, ISLC 2008; Sorrento; Italy; 14 September 2008 through 18 September 2008
0899-9406 (ISSN)
55-56978-142441783-4 (ISBN)
Ämneskategorier
Telekommunikation
DOI
10.1109/ISLC.2008.4636006
ISBN
978-142441783-4