Janusz Kanski
Showing 37 publications
Electronic structure of (Ga,Mn)As revisited
Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES
Effects of nonuniform Mn distribution in (Ga,Mn)As
Mn-induced modifications of Ga 3d photoemission from (Ga, Mn) As: evidence for long range effects
Electron Spectroscopic Studies of Homogenous (GaMn)As layers
Post-growth annealing of (Ga,Mn)As under Sb capping
Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As
Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B
As3d core level studies of (GaMn)As annealed under As capping
Formation of epitaxial MnBi layers on (GaMn)As
Photoelectron spectroscopic studies of ultra-thin CuPc and PTCDA layers on Cu(100)
GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions
Mn enriched surface of (GaMn)As layers annealed under arsenic capping
Photoemission study of the valence band offset between LT-GaAs and (GaMn)As
Organic molecular beam deposition system and initial studies of organic layer growth
How to make GaMnAs with high ferromagnetic phase transition temperature
Mn on the surface of ZnO(0001) - a resonant photoemisson study
Solid Phase Epitaxy of Feromagnetic MnAs layer and Quantum Dots on Annealed GaMnAs
Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"
GaSb/GaAs quantum dot systems: In situ synchrotron radiation x-ray photoelectron spectroscopy study
Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping
Post-growth annealing of (Ga,Mn)As under As capping - an alternative way to increase Tc
Importance of ITO surface conditions for the interaction with thin CuPc layers
Importance of ITO surface conditions for the interaction with thin CuPc layers
Photoemission studies of the annealing-induced modifications of Ga0.95Mn0.05As
Photoemission studies of Mg and Rb layers on Zn(0001).
Electronic structure of GaN(000-1)-(1 x 1) surface
A study of the surface structure and composition of annealed Ga0.96Mn0.04As(100)
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