Through-Silicon Vias Filled With Densified and Transferred Carbon Nanotube Forests
Journal article, 2012

Through-silicon vias (TSVs) filled with densified and transferred carbon nanotube (CNT) forests are experimentally demonstrated. The filling is achieved by a postgrowth low-temperature transfer process at 200oC instead of direct CNT growth in the vias normally requiring high temperature. A vapor densification method is also applied to densify the as-grown CNT forests, which allows for packing more CNTs in the vias to reduce their resistances. CNT-filled TSVs fabricated based on these two key steps show CMOS compatibility and roughly one order of magnitude reduction in resistivity compared to the TSVs filled with as-grown undensified CNT forests.

carbon nanotubes

3D integration

through-silicon-vias

Author

Kjell Jeppson

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Teng Wang

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Di Jiang

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Lilei Ye

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Johan Liu

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 33 3 420-422

Areas of Advance

Information and Communication Technology

Driving Forces

Sustainable development

Roots

Basic sciences

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LED.2011.2177804

More information

Created

10/8/2017