Through-Silicon Vias Filled With Densified and Transferred Carbon Nanotube Forests
Artikel i vetenskaplig tidskrift, 2012

Through-silicon vias (TSVs) filled with densified and transferred carbon nanotube (CNT) forests are experimentally demonstrated. The filling is achieved by a postgrowth low-temperature transfer process at 200oC instead of direct CNT growth in the vias normally requiring high temperature. A vapor densification method is also applied to densify the as-grown CNT forests, which allows for packing more CNTs in the vias to reduce their resistances. CNT-filled TSVs fabricated based on these two key steps show CMOS compatibility and roughly one order of magnitude reduction in resistivity compared to the TSVs filled with as-grown undensified CNT forests.

carbon nanotubes

3D integration

through-silicon-vias

Författare

Kjell Jeppson

Chalmers, Teknisk fysik, Elektronikmaterial

Teng Wang

Chalmers, Teknisk fysik, Elektronikmaterial

Di Jiang

Chalmers, Teknisk fysik, Elektronikmaterial

Lilei Ye

Chalmers, Teknisk fysik, Elektronikmaterial

Johan Liu

Chalmers, Teknisk fysik, Elektronikmaterial

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 33 3 420-422 6138280

Styrkeområden

Informations- och kommunikationsteknik

Drivkrafter

Hållbar utveckling

Fundament

Grundläggande vetenskaper

Ämneskategorier

Elektroteknik och elektronik

Annan elektroteknik och elektronik

DOI

10.1109/LED.2011.2177804

Mer information

Senast uppdaterat

2022-04-05